鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Output voltage high-level
Output voltage low-level
Input resistance
*1
Turn-on time
*2
Turn-off time
*2
Short-circuit forward transfer capacitance
(Common-source)
Symbol
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
錚
fs
錚?/div>
V
OH
V
OL
R
1
+R
2
t
on
t
off
C
iss
V
DD
=
5 V, V
GS
=
0 V to 5 V, R
L
=
200
鈩?/div>
V
DD
=
5 V, V
GS
=
5 V to 0 V, R
L
=
200
鈩?/div>
V
DS
=
5 V, V
GS
=
0, f
=
1 MHz
Conditions
I
D
=
100
碌A(chǔ),
V
GS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
=
8 V, V
DS
=
0
I
D
=
100
碌A(chǔ),
V
DS
=
V
GS
I
D
=
20 mA, V
GS
=
5 V
I
D
=
20 mA, V
DS
=
5 V, f
=
1 kHz
V
DS
=
5 V, V
GS
=
1 V, R
L
=
200
鈩?/div>
V
DS
=
5 V, V
GS
=
5 V, R
L
=
200
鈩?/div>
2
1.1
+0.3
鈥?.1
1
Min
50
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
鈩?/div>
mS
V
10
40
1.5
80
3.5
50
20
4.5
1.0
100
200
1.0
1.0
9
15
30
V
k鈩?/div>
碌s
碌s
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Resistance ratio R
1
/R
2
=
1/50
*2: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00035BED
0.4
鹵0.2
5藲
1
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